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NUP1301ML3T1G, SZNUP1301ML3T1G
MAXIMUM RATINGS (Each Diode) (T J = 25 ? C unless otherwise noted)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non ? Repetitive Peak Forward Current
t = 1.0 m s
t = 1.0 ms
t = 1.0 S
Symbol
V R
I F
I FM(surge)
V RRM
I F(AV)
I FRM
I FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR ? 5 = 1.0   0.75   0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction ? to ? Ambient
Lead Solder Temperature
Maximum 10 Seconds Duration
Junction Temperature
Storage Temperature
Symbol
R q JA
T L
T J
T stg
Max
625
260
? 65 to 150
? 65 to +150
Unit
? C/W
? C
? C
? C
ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 m A)
Reverse Voltage Leakage Current
(V R = 70 Vdc)
(V R = 25 Vdc, T J = 150 ? C)
(V R = 70 Vdc, T J = 150 ? C)
Diode Capacitance (between I/O and ground)
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
V (BR)
I R
C D
V F
70
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
2.5
30
50
0.9
715
855
1000
1250
Vdc
m Adc
pF
mV dc
2. FR ? 5 = 1.0   0.75   0.062 in.
3. Alumina = 0.4   0.3   0.024 in, 99.5% alumina.
4. Include SZ-prefix devices where applicable.
http://onsemi.com
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